Semiconductor device and method of manufacturing the same

ABSTRACT

A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of Ser. No. 13/240,303,filed Sep. 22, 2011, which is a divisional application of Ser. No.12/564,313, filed Sep. 22, 2009, now U.S. Pat. No. 8,207,042, which is adivisional application of Ser. No. 11/604,694, filed Nov. 28, 2006, nowU.S. Pat. No. 7,626,215, which is based on and claims the priority fromJP Patent Application No. 2006-206910, filed on Jul. 28, 2006, theentire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device capable ofoperating at high speed and a method of manufacturing the same.

2. Description of the Related Art

In an LSI with a transistor or the like of a process rule of 90 nm nodeand thereafter, a standby off-leak current accompanying miniaturizationof elements is not negligible. Therefore, it becomes difficult toimprove device performance only by simple miniaturization of a gatelength of a transistor, and thus a new approach is needed for improvingthe device performance.

With such an ultra-miniaturized transistor, the dimension of a channelregion located immediately below a gate electrode is very small ascompared with conventional transistors. In such a case, it is known thatthe degree of movement of carriers (electrons and holes) running in thechannel region is largely affected by stress applied to the channelregion. Accordingly, there are attempted many times to improve theoperation speed of a semiconductor device by adjusting such stress.

In general, in a transistor in which a region of its silicon substratewhere an impurity is introduced is the channel, the degree of movementof holes is smaller than the degree of movement of electrons. Therefore,improvement of the operation speed of a p-channel MOS transistor usingholes as carriers is an important problem when designing a semiconductorintegrated circuit device. Then, in the p-channel MOS transistor, it isknown that the degree of movement of carriers (holes) improves byapplying uniaxial compression stress to the channel region. As astructure for applying the compression stress to the channel regionthere is proposed one shown in FIG. 18. FIG. 18 is a cross-sectionalview showing the structure of a conventional strained silicontransistor.

As shown in FIG. 18, a gate insulating film 202 and a gate electrode 203are sequentially formed on an n-type silicon substrate 201. In a surfaceof the silicon substrate 201, impurity diffused layers 207 sandwichingthe gate electrode 203 in a plan view are formed. In the impuritydiffused layers 207, a p-type impurity is introduced. Further, on sidesof the gate electrode 203, side wall insulating films 206 are formed.

In each of the impurity diffused layers 207, a trench 208 is formed soas to match with the side wall insulating film 206, and a SiGe mixedcrystal layer 209 is formed therein by an epitaxial growth method. Then,the impurity diffused layer 207 and the SiGe mixed layer 209 constitutea source-drain region. Note that a part of the impurity diffused layer207 also functions as an extension region. Further, a region of thesilicon substrate 201 sandwiched by the source-drain regions functionsas the channel region. Therefore, the degree of flow of holestransported from one to the other of the impurity diffused layers 207via the channel region is controlled by a gate voltage applied to thegate electrode 203.

Further, in this p-channel MOS transistor, the lattice constant of SiGeconstituting the SiGe mixed crystal layer 209 is larger than the latticeconstant of Si constituting the silicon substrate 201, so that thecompression stress in a horizontal direction operates as shown by arrows“a” in the SiGe mixed crystal layer 209. Then, along with thiscompression stress, as shown by an arrow “b”, the SiGe mixed crystallayer 209 is strained in the vertical direction. Furthermore, since theSiGe mixed crystal layer 209 is epitaxially grown relative to thesilicon substrate 201, this strain induces a vertical strain as shown byan arrow “c” in the channel region. Then, along with this strain,uniaxial compression stress is induced as shown by arrows “d” in thechannel region.

In the conventional p-channel MOS transistor constructed as describedabove, since such uniaxial compression stress is applied in the channelregion, symmetry of Si crystals constituting the channel region changeslocally. In other words, a strain is generated in the channel region.Along with such a change of symmetry, degeneracy of the valence band ofheavy holes and the valence band of light holes is released, and thusthe degree of movement of holes in the channel region increases, therebyimproving the operation speed of the transistor. Then, such increase inthe degree of movement of holes and improvement in the transistoroperation speed accompanying therewith appear significantly particularlyin an ultra-miniaturized transistor having a gate length of 100 nm orsmaller.

As described above, it has been pointed out in principle that, in atransistor in which the SiGe mixed crystal layer is embedded in thesource-drain region, the larger the compression strain generated in thechannel region, the more the degree of movement of holes increases (K.Mistry et al., 2004 Symposium on VLSI Technology, Digest of TechnicalPapers, pp. 50-51). Such increase in compression strain can be realizedby increasing a Ge ratio in the epitaxially-grown SiGe mixed layer.However, when the Ge ratio in the epitaxially grown SiGe mixed layer istoo high, a lattice mismatch between Si constituting the substrate andSiGe constituting the mixed crystal layer becomes too large, therebygenerating dislocation. Such dislocation not only weakens the effect ofthe compression strain induced by the SiGe mixed crystal layer, but alsoincreases a leak current taking the dislocation as a path. As a result,the transistor performance deteriorates.

In general, dislocation generated in a SiGe mixed crystal layerepitaxially grown on a silicon substrate occurs easier as the Ge ratiois higher or the thickness thereof is larger (R. People et al., Appl.Phys. Lett. Vol. 47(3), 1985). In theory, the limit of a film thicknessover which the dislocation occurs is referred to as a critical filmthickness, and for epitaxially growing a SiGe mixed crystal layer inwhich no dislocation exists, it is desirable that the thickness thereofis controlled to be smaller than the critical film thickness. However,when producing transistors in practice, there exist physical damagessuch as damage due to ion implantation, sputtering damage due to dryetching, and plasma damage in a region (source-drain region) where theSiGe mixed crystal layer is to be formed. Accordingly, even when it iscontrolled to be smaller than the critical film thickness, there maystill occur dislocation in SiGe mixed crystals with these damages beingorigins.

Therefore, in conventional silicon transistors, in order to assure thenormal operation, the Ge concentration is suppressed to be low. In otherwords, the degree of movement of carriers is suppressed more thannecessary.

Further, a wiring is formed on the SiGe mixed crystal layer. Then, inorder to make a favorable contact between them, a silicide layer isformed. As such a silicide layer, a Ni silicide layer is used in generalin a transistor of 90 nm node or thereafter. However, when the Nisilicide layer is used, as the Ge concentration (Ge ratio) in SiGe mixedcrystals becomes higher, its heat stability more easily decreases, andalso a NiSi₂ phase with high resistivity is more easily formed. TheNiSi₂ phase has high resistance as compared to a NiSi phase, and easilyforms a spike surrounded by {111} planes. Consequently, when the NiSi₂layer exists, current driving performance of the transistor easilydeteriorates, and also the leak current easily increases.

Related art is disclosed in Japanese Patent Application Laid-open No.2006-13428.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor deviceand a method of manufacturing the same capable of raising the degree ofmovement of carriers while suppressing conventional problems.

In order to solve the above problems, the inventors of the presentinvention have conducted dedicated studies and consequently reachedseveral aspects of the invention as follows.

A first semiconductor device according to the present invention isprovided with a silicon substrate, a gate insulating film formed on thesilicon substrate, a gate electrode formed on the gate insulating film,two first conductivity type impurity diffused layers being formed in asurface of the silicon substrate and each having a trench formed in asurface thereof, and two first conductivity type semiconductor layerseach epitaxially grown from a bottom of the trench. The impuritydiffused layers sandwich the gate electrode in a plan view. Aconductivity type of a region of the silicon substrate immediately belowthe gate insulating film is a second conductivity type. Further, each ofthe semiconductor layers is provided with a first region including aportion located within or lower than a same plane with an interfacebetween the silicon substrate and the gate insulating film, and a secondregion located closer to a bottom side of the trench than the firstregion. The second region has a lattice constant closer to a latticeconstant of silicon than a lattice constant of the first region.

A second semiconductor device according to the present invention isprovided with a silicon substrate, a gate insulating film formed on thesilicon substrate, a gate electrode formed on the gate insulating film,two first conductivity type impurity diffused layers being formed in asurface of the silicon substrate and each having a trench formed in asurface thereof, two first conductivity type semiconductor layers eachepitaxially grown from a bottom of the trench, and a silicide layerformed on each of the semiconductor layers. The impurity diffused layerssandwich the gate electrode in a plan view. A conductivity type of aregion of the silicon substrate immediately below the gate insulatingfilm is a second conductivity type. Further, each of the semiconductorlayers is provided with a fourth region including a portion locatedwithin or lower than a same plane with an interface between the siliconsubstrate and the gate insulating film, and a fifth region in contactwith the silicide layer, the fifth region having a lattice constantcloser to a lattice constant of silicon than a lattice constant of thefourth region.

In a first method of manufacturing a semiconductor device according tothe present invention, a gate insulating film is formed on a siliconsubstrate, and thereafter a gate electrode is formed on the gateinsulating film. Next, two first conductivity type impurity diffusedlayers are formed in a surface of the silicon substrate. The impuritydiffused layers sandwich the gate electrode in a plan view. Then, atrench is formed in a surface of each of the impurity diffused layers.Subsequently, a first conductivity type semiconductor layer isepitaxially grown from a bottom of the trench. A conductivity type of aregion of the silicon substrate immediately below the gate insulatingfilm is a second conductivity type. Further, when the semiconductorlayer is epitaxially grown, there is formed a first region including aportion located within or lower than a same plane with an interfacebetween the silicon substrate and the gate insulating film. Further,before forming the first region, there is formed a second region closerto a bottom side of the trench than the first region. The second regionhas a lattice constant closer to a lattice constant of silicon than alattice constant of the first region.

In a second method of manufacturing a semiconductor device according tothe present invention, a gate insulating film is formed on a siliconsubstrate, and thereafter a gate electrode is formed on the gateinsulating film. Next, two first conductivity type impurity diffusedlayers are formed in a surface of the silicon substrate. The impuritydiffused layers sandwich the gate electrode in a plan view. Then, atrench is formed in a surface of each of the impurity diffused layers.Subsequently, a first conductivity type semiconductor layer isepitaxially grown from a bottom of the trench. Thereafter, a silicidelayer is formed on the semiconductor layer. A conductivity type of aregion of the silicon substrate immediately below the gate insulatingfilm is a second conductivity type. Further, when the semiconductorlayer is epitaxially grown, there is formed a fourth region including aportion located within or lower than a same plane with an interfacebetween the silicon substrate and the gate insulating film, andthereafter, there is formed a fifth region in contact with the silicidelayer. The fifth region has a lattice constant closer to a latticeconstant of silicon than a lattice constant of the fourth region.

It should be noted that in these inventions, the “regions having alattice constant closer to a lattice constant of silicon” include a“region having a lattice constant completely corresponding to a latticeconstant of silicon.” Further, each region is not needed to becompletely distinguishable from a layer, a film or the like located onanother periphery, and may be a portion in a layer for example.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A to FIG. 1F are cross-sectional views showing a method ofmanufacturing a semiconductor device according to a first embodiment ofthe present invention in the order of steps;

FIG. 2 is a graph showing Ge concentrations in SiGe mixed crystal layersin the first embodiment;

FIG. 3A is a cross-sectional view showing the structure of asemiconductor device according to a second embodiment of the presentinvention;

FIG. 3B is a graph showing Ge concentrations in SiGe mixed crystallayers in the second embodiment;

FIG. 4A is a graph showing results of measurement of on-currents;

FIG. 4B is a graph showing results of measurement of off-currents;

FIG. 5A is a cross-sectional view showing the structure of asemiconductor device according to a third embodiment of the presentinvention;

FIG. 5B is a graph showing Ge concentrations in SiGe mixed crystallayers in the third embodiment;

FIG. 6A is a graph showing results of measurement of sheet resistance;

FIG. 6B is a graph showing on-off characteristics of the thirdembodiment;

FIG. 7A is a micrograph showing a rough surface of a semiconductorlayer;

FIG. 7B is a micrograph showing a smooth surface of a semiconductorlayer;

FIG. 8A is a graph showing a relationship between the amount of defectsin SiGe mixed crystals and an on-off characteristic;

FIG. 8B is a graph showing a relationship between the amount of defectsin SiGe mixed crystals and a roll-off characteristic;

FIG. 9A is a cross-sectional view showing the structure of asemiconductor device according to a fourth embodiment of the presentinvention;

FIG. 9B is a graph showing Ge concentrations in SiGe mixed crystallayers in the fourth embodiment;

FIG. 10A is a cross-sectional view showing the structure of asemiconductor device according to a fifth embodiment of the presentinvention;

FIG. 10B is a graph showing Ge concentrations in SiGe mixed crystallayers in the fifth embodiment;

FIG. 11 is a graph showing on-off characteristics of the fifthembodiment;

FIG. 12A is a cross-sectional view showing the structure of asemiconductor device according to a sixth embodiment of the presentinvention;

FIG. 12B is a graph showing Ge concentrations in SiGe mixed crystallayers in the sixth embodiment;

FIG. 13A is a cross-sectional view showing a method of manufacturing asemiconductor device according to a seventh embodiment of the presentinvention;

FIG. 13B is a timing chart showing changes in growing temperatures ofSiGe mixed crystal layers and Ge concentrations in the seventhembodiment;

FIG. 14 is a cross-sectional view showing a method of manufacturing asemiconductor device according to an eighth embodiment of the presentinvention;

FIG. 15A to FIG. 15G are cross-sectional views showing a method ofmanufacturing a semiconductor device according to a ninth embodiment ofthe present invention in the order of steps;

FIG. 16 is a cross-sectional view showing a method of manufacturing asemiconductor device according to a tenth embodiment of the presentinvention;

FIG. 17 is a cross-sectional view showing a method of manufacturing asemiconductor device according to an eleventh embodiment of the presentinvention; and

FIG. 18 is a cross-sectional view showing the structure of aconventional strained silicon transistor.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be explainedspecifically with reference to the attached drawings. However, for thesake of convenience, a structure of a semiconductor device isoccasionally described together with a method of manufacturing the same.

First Embodiment

To begin with, a first embodiment of the present invention is explained.FIG. 1A to FIG. 1F are cross-sectional views showing a method ofmanufacturing a semiconductor device according to the first embodimentof the present invention in the order of steps.

In this embodiment, first, as shown in FIG. 1A, on an n-type siliconsubstrate 1 whose surface is a (001) plane for example, a gateinsulating film 2 having a thickness of approximately 1.2 nm for exampleis formed. As the gate insulating film 2, for example a thermallyoxidized film or a SiON film is formed. Next, on the gate insulatingfilm 2, a gate electrode 3 constituted of polycrystalline silicon inwhich a p-type impurity is introduced is formed. Then, with the gateelectrode 3 being a mask, a p-type impurity is ion-implanted to therebyform low-concentration impurity diffused layers 4 in the surface of thesilicon substrate on both sides of the gate electrode 3 respectively.

Thereafter, on the whole surface, an oxide film is formed by a CVDmethod, an insulating film is formed further, and they are etched backto thereby form a CVD oxide film 5 and a side wall insulating film 6 asshown in FIG. 1B. The CVD oxide film 5 cover a part of the surface ofthe silicon substrate 1 and a side surface of the gate electrode 3.Subsequently, with the gate electrode 3, the CVD oxide films 5 and theside wall insulating films 6 being a mask, a p-type impurity ision-implanted to thereby form high-concentration impurity diffusedlayers 7 which overlap parts of the low-concentration impurity diffusedlayers 4 respectively.

Next, as shown in FIG. 1C, trenches 8 matching with the side wallinsulating films 6 are formed in the high-concentration impuritydiffused layers 7 respectively.

Then, by an epitaxial growth method, as shown in FIG. 1D, a p-type SiGemixed crystal layer 19 a is formed in each of the trenches 8. At thistime, the height a₁ of an uppermost surface of the SiGe mixed crystallayer 19 a from the bottom of the trench 8 is made lower than the depthof the trench 8 with the surface of the silicon substrate 1 being thestandard.

Further, a Ge concentration x₁ in the SiGe mixed crystal layer 19 a islower than 20 atom % for example. By defining the Ge concentration x₁ inthe SiGe mixed crystal layer 19 a appropriately, a difference (mismatch)in lattice constant between the SiGe mixed crystal layer 19 a and thesilicon substrate 1 becomes small, which makes occurrence of dislocationwith an interface therebetween being the origin difficult.

Thereafter, by an epitaxial growth method, as shown in FIG. 1E, a p-typeSiGe mixed crystal layer 19 b is formed on each of the SiGe mixedcrystal layers 19 a. At this time, the height b₁ of an uppermost surfaceof the SiGe mixed crystal layer 19 b from the bottom of the trench 8 ismade higher than the depth of the trench 8 with the surface of thesilicon substrate 1 being the standard.

Also, a Ge concentration y₁ in the SiGe mixed crystal layer 19 b is 20atom % or higher for example. By appropriately defining the Geconcentration y₁ in the SiGe mixed crystal layer 19 b, a difference(mismatch) in lattice constant between the SiGe mixed crystal layer 19 band the silicon substrate 1 becomes large, which effectively appliesuniaxial compression stress to the channel region. FIG. 2 is a graphshowing the Ge concentrations in the SiGe mixed crystal layers in thefirst embodiment.

Subsequently, a Ni layer or the like are formed on the entire surfaceand thermal treatment is performed to thereby form silicide layers 10 onthe SiGe mixed crystal layers 19 b respectively as shown in FIG. 1F, andalso form a silicide layer 11 on the gate electrode 3. Thereafter, aninterlayer insulating film, a wiring and so forth are formed to completethe semiconductor device.

Here, a concrete method of selectively forming the p-type SiGe mixedcrystal layers 19 a and 19 b is explained.

First, after the trenches 8 are formed as shown in FIG. 1C, a nativeoxide film existing on the surface of the silicon substrate 1 isremoved. Next, in a pressure-reduced CVD apparatus in which hydrogen gasand inert gas (nitrogen gas, argon gas, helium gas, or the like) arefilled and the pressure is kept between 5 Pa and 1330 Pa, the siliconsubstrate 1 in which the trenches 8 and so forth are formed isintroduced, and a substrate temperature is raised to between 400° C. to550° C. in a hydrogen atmosphere. Then, by retaining the substrate forapproximately 60 minutes at the maximum under conditions of pressure: 5Pa to 1330 Pa and temperature: 400° C. to 550° C., hydrogen baking isperformed. Thereafter, while keeping the pressure and the temperature,in the pressure-reduced CVD apparatus, mixed gas of SiH₄, B₂H₆, HCl andGeH₄ is supplied in addition to the hydrogen gas and/or the inert gasdescribed above. SiH₄ is source gas for Si, B₂H₆ gas is source gas for B(impurity), and GeH₄ is source gas for Ge. Further, HCl is gas whichimproves selectivity of growing direction. Note that the partialpressure of SiH₄ is fixed in the range of 1 Pa to 10 Pa, the partialpressure of B₂H₆ in the range of 1×10⁻⁵ Pa to 1×10⁻³ Pa, and the partialpressure of the HCl in the range of 1 Pa to 10 Pa. Further, the partialpressure of the GeH₄ gas is selected in the range of 0.1 Pa to 10 Paaccording to the Ge concentration in the SiGe mixed crystal layer 19 aor 19 b that is attempted to be formed. Further, the doping amount of Bis approximately 1×10¹⁹ cm⁻³ to 1×10²¹ cm⁻³.

Such control of the partial pressure of supplied gas can be easilyperformed by adjusting a supply gas flow rate using a mass flowcontroller. Therefore, the process of stacking the SiGe mixed crystallayers 19 a and 19 b can be carried out sequentially in thepressure-reduced CVD apparatus.

In the SiGe mixed crystal layers 19 a and 19 b formed by the method asdescribed above, B is doped by approximately 1×10¹⁹ cm⁻³ to 1×10²¹ cm⁻³,which is electrically active almost completely. Therefore, withoutperforming thermal treatment after formation, low resistivity(approximately 1×10⁻² Ωcm to 1×10⁻³ Ωcm) can be obtained.

According to the first embodiment as described above, since the SiGemixed crystal layers 19 a having the low Ge concentration areepitaxially grown directly on the silicon substrate 1, a difference inlattice constant is small, and thus generation of dislocation issuppressed. Furthermore, on sides of the channel region, the SiGe mixedcrystal layers 19 b having the high Ge concentration exist instead ofthe SiGe mixed crystal layers 19 a, so that a sufficient strain can begenerated to operate adequate stress to the channel region.

Further, when the growing temperature for the SiGe mixed crystal layersis the relatively low temperature of 400° C. to 550° C., HCl in themixed gas is absorbed on a growing uppermost surface particularly on aside surface of the trench 8 having a high-order of plane direction anddissolved therein, which lowers the growing speed of the SiGe mixedcrystal layer. Therefore, the SiGe mixed crystal layers 19 a grow fromthe bottom up in the vertical direction relative to the surface ((001)plane) of the substrate. This means that the SiGe mixed crystal layers19 a hardly grow on a side surface of the trench 8 located between theSiGe mixed crystal layers 19 b and the channel region, and therefore itcan be said that decrease in stress due to the SiGe mixed crystal layers19 a does not occur at all.

According to the first embodiment as described above, since the SiGemixed crystal layers 19 a having the low Ge concentration areepitaxially grown on the silicon substrate 1, dislocation based on adifference in lattice constant thereof barely exists. Accordingly,problems such as decrease in compression strain and increase in leakcurrent due to the presence of dislocation are suppressed. If the Geconcentration in the entire SiGe mixed crystal layers existing in thetrenches 8 is low, an adequate strain cannot be generated in the channelregion, but in the first embodiment, since the SiGe mixed crystal layers19 b having the high Ge concentration exist on the SiGe mixed crystallayers 19 a, an adequate strain can be generated in the channel region.Specifically, in this embodiment, since the SiGe mixed crystal layers 19b are located instead of the SiGe mixed crystal layers 19 a on sides ofan uppermost portion of the channel region, which is important fortransportation of carriers (holes), a high degree of movement can beassured.

Furthermore, in this embodiment, the SiGe mixed crystal layers 19 a and19 b are embedded in the trenches 8 formed in the high-concentrationimpurity diffused layers 7. In other words, the SiGe mixed crystallayers 19 a and lower portions of the SiGe mixed crystal layers 19 b aresurrounded by the high-concentration impurity diffused layers 7.Accordingly, the p-type SiGe mixed crystal layers 19 a having a smallband gap and the n-type silicon substrate 1 (n-type well) do not contactdirectly with each other. Therefore, also generation of a leak currentin the pn junction at the Si/SiGe interface is suppressed.

Note that it is preferable that a pocket region exists at a portion ofthe channel region in contact with the extension region. The pocketregion can be formed for example by performing oblique ion implantationof an n-type impurity such as Sb before forming the low-concentrationimpurity diffused layers 4.

Further, the Ge concentration x₁ in the SiGe mixed crystal layers 19 ais acceptable as long as it is lower than the Ge concentration y₁ in theSiGe mixed crystal layers 19 b, and these values are not limited tolower than 20 atom %, and 20 atom % or higher as described above. Alsoin the following embodiments, Ge concentrations are examples, which areacceptable as long as satisfying a higher-lower relationship of Geconcentration.

Second Embodiment

Next, a second embodiment of the present invention is explained. FIG. 3Ais a cross-sectional view showing the structure of a semiconductordevice according to the second embodiment of the present invention.

In the second embodiment, a p-type SiGe mixed crystal layer 29 a isformed by an epitaxial growth method in each of trenches 8, and a p-typeSiGe mixed crystal layer 29 b is formed thereon by an epitaxial growthmethod. Note that the height a₂ of an uppermost surface of the SiGemixed crystal layer 29 a from the bottom of the trench 8 is lower thanthe depth of the trench 8 with the surface of the silicon substrate 1being the standard. Further, the height b₂ of an uppermost surface ofthe SiGe mixed crystal layer 29 b from the bottom of the trench 8 ishigher than the depth of the trench 8 with the surface of the siliconsubstrate 1 being the standard. Furthermore, a Ge concentration in theSiGe mixed crystal layer 29 a increases with distance from the bottom ofthe trench 8, and is y₂ at the uppermost surface. Further, the Geconcentration in the SiGe mixed crystal layer 29 a is lower than 20 atom% as the whole for example, and the Ge concentration y₂ is 20 atom % orhigher for example. On the other hand, the Ge concentration in the SiGemixed crystal layer 29 b is y₂. The other structure is the same as thefirst embodiment. FIG. 3B is a graph showing the Ge concentrations inthe SiGe mixed crystal layers in the second embodiment.

According to the second embodiment as described above, a discontinuouspart of the Ge concentration no longer exists, and thus it is possibleto further suppress defects brought about by an abrupt lattice mismatchthat occurs at a hetero junction.

Here, a concrete method of forming the p-type SiGe mixed crystal layers29 a and 29 b is explained.

First, similarly to the first embodiment, after the trenches 8 areformed as shown in FIG. 1C, a native oxide film existing on the surfaceof the silicon substrate 1 is removed. Next, in a pressure-reduced CVDapparatus in which hydrogen gas and inert gas (nitrogen gas, argon gas,helium gas, or the like) are filled and the pressure is kept between 5Pa and 1330 Pa, the silicon substrate 1 in which the trenches 8 and soforth are formed is introduced, and a substrate temperature is raised tobetween 400° C. to 550° C. in a hydrogen atmosphere. Then, by retainingthe substrate for approximately 60 minutes at the maximum underconditions of pressure: 5 Pa to 1330 Pa and temperature: 400° C. to 550°C., hydrogen baking is performed. Thereafter, while keeping the pressureand the temperature, in the pressure-reduced CVD apparatus, mixed gas ofSiH₄, B₂H₆, HCl and GeH₄ is supplied in addition to the hydrogen gasand/or the inert gas described above. Note that the partial pressure ofSiH₄ is fixed in the range of 1 Pa to 10 Pa, the partial pressure ofB₂H₆ in the range of 1×10⁻⁵ Pa to 1×10⁻³ Pa, and the partial pressure ofthe HCl in the range of 1 Pa to 10 Pa. Further, the partial pressure ofGeH₄ is increased sequentially from 0 Pa to the range of 0.1 Pa to 10 Pain proportion to the gas supplying time. By such control of the partialpressure, the SiGe mixed crystal layers 29 a are formed. Thereafter, bycontinuing the film formation with the partial pressure of GeH₄ beingfixed, the SiGe mixed crystal layers 29 b are formed.

Such control of the partial pressure of supplied gas can be easilyperformed by adjusting a supply gas flow rate using a mass flowcontroller. Therefore, the process of stacking the SiGe mixed crystallayers 29 a and 29 b can be carried out sequentially in thepressure-reduced CVD apparatus.

Here, results of measurement of on-currents and off-currents actuallyperformed by the inventors of the present invention with respect to thesecond embodiment are explained. For measuring the on-currents, threetypes of samples having different Ge concentrations y₂ were made.Further, as a comparative subject for them, a reference sample was alsomade in which the SiGe mixed crystal layers 29 a were not formed andthus all the SiGe mixed crystal layers in the trenches 8 were the SiGemixed layers 29 b. On the other hand, for measuring the off-currents,three types of samples having different Ge concentrations y₂ were made.Further, as a comparative subject for them, a reference sample was madein which SiGe mixed crystal layers 29 a were not formed and thus all theSiGe mixed crystal layers in the trenches 8 were the SiGe mixed layers29 b.

Results of measurement of the on-currents are shown in FIG. 4A, and theresults of measurement of the off-currents are shown in FIG. 4B. Notethat the vertical axis in FIG. 4A shows a ratio of the on-currents ofthe samples with the on-current of the reference sample being thestandard. Further, the vertical axis in FIG. 4B shows a ratio of theoff-currents of the samples with the off-current of the reference samplebeing the standard.

As shown in FIG. 4A and FIG. 4B, as the Ge concentration y₂ increased,the ratio of the on-currents increased, and also the off-current wasreduced. In particular, this effect was significant when the Geconcentration y₂ was 20 atom % or higher. This fact shows that a crystaldefect such as dislocation easily occurs when just the Ge concentrationy₂ is high, but with the presence of the strain buffer layers (SiGemixed crystal layers 29 a), occurrence of the dislocation is suppressed,the leak current with the dislocation being a path is suppressed, andalso the compression stress provided by the SiGe mixed crystal layerswill not be impaired.

Third Embodiment

Next, a third embodiment of the present invention is explained. FIG. 5Ais a cross-sectional view showing the structure of a semiconductordevice according to the third embodiment of the present invention.

In the third embodiment, a p-type SiGe mixed crystal layer 39 a isformed by an epitaxial growth method in each of trenches 8, and a p-typeSiGe mixed crystal layer 39 b is formed thereon by an epitaxial growthmethod. Note that the height a₃ of an uppermost surface of the SiGemixed crystal layer 39 a from the bottom of the trench 8 is higher thanthe depth of the trench 8 with the surface of the silicon substrate 1being the standard. Furthermore, a Ge concentration x₃ in the SiGe mixedcrystal layer 39 a is 20 atom % or higher for example, and a Geconcentration y₃ in the SiGe mixed crystal layer 39 b is lower than 20atom % for example. The other structure is the same as the firstembodiment. FIG. 5B is a graph showing the Ge concentrations in the SiGemixed crystal layers in the third embodiment.

According to the third embodiment as described above, since the SiGemixed crystal layers 39 a having the high Ge concentration are locatedon sides of an uppermost portion of the channel region, which isimportant for transportation of carriers (holes), a high degree ofmovement can be assured. Further, between the SiGe mixed crystal layers39 a having the high Ge concentration and the silicide layers 10, theSiGe mixed crystal layers 39 b having the low Ge concentration exist,and thus a NiSi₂ phase having high resistivity is not formed easily.Therefore, a spike having a (111) plane is not easily formed, and a leakcurrent due to this spike is suppressed. Specifically, according to thethird embodiment, sheet resistance in the silicide layers 10 is reduced,and the leak current is reduced.

Note that instead of the SiGe mixed crystal layers 39 b having the lowGe concentration, Si layers, which do not include Ge at all, may beused.

Here, results of measurement of sheet resistance in the silicide layers10 actually performed by the inventors of the present invention withrespect to the third embodiment are explained. In this measurement, fivesamples having different Ge concentrations y₃ were made.

These results are shown in FIG. 6A. As shown in FIG. 6A, as the Geconcentration y₃ increased, the sheet resistance increased. Inparticular, when the Ge concentration y₃ was 20% or higher, increase inthe sheet resistance was significant. This fact shows that when the Geconcentration y₃ is 20% or higher, the NiSi₂ phase having higherresistivity as compared to the NiSi phase easily occurs. Therefore, theGe concentration y₃ of the SiGe mixed crystal layer 39 a is preferred tobe 20% or lower.

Next, results of tests of on-off characteristics performed actually bythe inventors of the present invention with respect to the thirdembodiment are explained. For these tests, a sample was made in whichthe Ge concentration x₃ in the SiGe mixed crystal layers 39 a was 28%and the Ge concentration y₃ in the SiGe mixed crystal layers 39 b was20%, and an on-current and an off-current thereof were measured.Further, as a comparative subject for them, a reference sample was alsomade in which the SiGe mixed crystal layers 39 b were not formed andthus all the SiGe mixed crystal layers in the trenches 8 were the SiGemixed layers 39 a having a Ge concentration of 28%, and an on-currentand an off-current thereof were measured. These results are shown inFIG. 6B. In FIG. 6B, “∘” denotes the on-off characteristic of the thirdembodiment, and “” denotes the on-off characteristic of the comparativesamples.

As shown in FIG. 6B, with the comparative sample, the off-currentincreased and thus a favorable on-off characteristic was not obtained.This is because the silicide layers 10 were formed directly on the SiGemixed crystal layers 39 a having the Ge concentration of 28%.Specifically, this is because the NiSi₂ phase was formed in a spikeshape, and thus the junction leak current increased. On the other hand,in the sample of the third embodiment, increase in the off-current wassuppressed, and a favorable on-off characteristic was obtained. Thismeans that a normal transistor operation can be assured. This is becausethe SiGe mixed crystal layers 39 b having the Ge concentration of 28%existed on the SiGe mixed crystal layers 39 a, and the silicide layer 11was formed thereabove.

Further, the SiGe mixed crystal layer 39 a having a Ge concentration ofapproximately 18 to 20 atom % was formed at 550° C. and with a thicknessof approximately 50 nm, and thereafter annealing was performed in ahydrogen atmosphere at 700° C. As a result, the surface of the SiGemixed crystal layer 39 a became rough as shown in FIG. 7A. The surfaceroughness (RMS) was 0.266 nm. On the other hand, a similar SiGe mixedcrystal layer 39 a was formed and a Si layer instead of the SiGe mixedcrystal layer 39 b was formed further with a thickness of approximately5 nm or smaller, and thereafter the similar annealing was performed. Asa result, the surface of the Si layer remained smooth as shown in FIG.7B. The surface roughness (RMS) thereof was 0.090 nm. This means thatthe presence of the Si layer improves the stability of the SiGe mixedcrystal layer 39 a, and thus defects are not easily generated.

FIG. 8A is a graph showing a relationship between the amount of defectsin SiGe mixed crystals and an on-off characteristic, and FIG. 8B is agraph showing a relationship between the amount of defects in SiGe mixedcrystals and a roll-off characteristic. Note that in FIG. 8A and FIG.8B, “” denotes a characteristic when there are a few defects, and “□”shows a characteristic when there are many defects. As shown in FIG. 8A,when there are many defects in the SiGe mixed crystals, the strain inthe channel is loosened, and the on-current decreases. Further, as shownin FIG. 8B, when there are many defects in the SiGe mixed crystals,abnormal diffusion is facilitated to reduce the absolute value of athreshold value. On the other hand, when defects in the SiGe mixedcrystals can be suppressed low, a favorable on-off characteristic androll-off characteristic can be obtained.

Fourth Embodiment

Next, a fourth embodiment of the present invention is explained. FIG. 9Ais a cross-sectional view showing the structure of a semiconductordevice according to the fourth embodiment of the present invention.

In the fourth embodiment, a p-type SiGe mixed crystal layer 49 a isformed by an epitaxial growth method in each of trenches 8, and a p-typeSiGe mixed crystal layer 49 b is formed thereon by an epitaxial growthmethod. Further, on the SiGe mixed crystal layer 49 b, a p-type SiGemixed crystal layer 49 c is formed by an epitaxial growth method. Notethat the height a₄ of an uppermost surface of the SiGe mixed crystallayer 49 a from the bottom of the trench 8 is lower than the depth ofthe trench 8 with the surface of the silicon substrate 1 being thestandard. Further, the height b₄ of an uppermost surface of the SiGemixed crystal layer 49 b from the bottom of the trench 8 is higher thanthe depth of the trench 8 with the surface of the silicon substrate 1being the standard. Furthermore, a Ge concentration x₄ in the SiGe mixedcrystal layer 49 a is lower than 20 atom % for example, a Geconcentration y₄ in the SiGe mixed crystal layer 49 b is 20 atom % orhigher for example, and a Ge concentration z₄ in the Site mixed crystallayer 49 c is lower than 20 atom % for example. The other structure isthe same as the first embodiment. FIG. 9B is a graph showing the Geconcentrations in the SiGe mixed crystal layers in the fourthembodiment. Note that in FIG. 9B, the Ge concentrations x₄ and z₄correspond with each other, but they may be different from each other aslong as they are lower than the Ge concentration y₄.

According to the fourth embodiment as described above, since the SiGemixed crystal layers 49 b having the high Ge concentration are locatedon sides of an uppermost portion of the channel region, which isimportant for transportation of carriers (holes), a high degree ofmovement can be assured. Further, by the SiGe mixed crystal layers 49 a,similarly to the first embodiment, problems based on occurrence ofdislocation can be suppressed. Furthermore, by the SiGe mixed crystallayers 49 c, similarly to the third embodiment, the silicide layers 10can be formed stably. In other words, the effects of the first and thirdembodiments can be obtained.

Note that instead of the SiGe mixed crystal layers 49 c having the lowGe concentration, Si layers, which do not include Ge at all, may beused.

Fifth Embodiment

Next, a fifth embodiment of the present invention is explained. FIG. 10Ais a cross-sectional view showing the structure of a semiconductordevice according to the fifth embodiment of the present invention.

In the fifth embodiment, a p-type SiGe mixed crystal layer 59 a isformed by an epitaxial growth method in each of trenches 8, and a p-typeSiGe mixed crystal layer 59 b is formed thereon by an epitaxial growthmethod. Furthermore, on the SiGe mixed crystal layer 59 b, a p-type SiGemixed crystal layer 59 c is formed by an epitaxial growth method. Notethat the height a₅ of an uppermost surface of the SiGe mixed crystallayer 59 a from the bottom of the trench 8 is lower than the depth ofthe trench 8 with the surface of the silicon substrate 1 being thestandard. Further, the height b₅ of an uppermost surface of the SiGemixed crystal layer 59 b from the bottom of the trench 8 is higher thanthe depth of the trench 8 with the surface of the silicon substrate 1being the standard. Furthermore, a Ge concentration in the SiGe mixedcrystal layer 59 a increases with distance from the bottom of the trench8, and is y₅ at the uppermost surface. Further, the Ge concentration inthe SiGe mixed crystal layer 59 a is lower than 20 atom % as the wholefor example, and the Ge concentration y₅ is 20 atom % or higher forexample. Further, a Ge concentration z₅ in the SiGe mixed crystal layer59 c is lower than 20 atom % for example. The other structure is thesame as the first embodiment. FIG. 10B is a graph showing the Geconcentrations in the SiGe mixed crystal layers in the fifth embodiment.

According to the fifth embodiment as described above, the effects of thesecond and third embodiments can be obtained.

Here, results of tests of on-off characteristics performed actually bythe inventors of the present invention with respect to the fifthembodiment are explained. For these tests, samples were made in whichthe Ge concentration y₅ in the SiGe mixed crystal layer 59 b was 28% andthe Ge concentration z₅ in the SiGe mixed crystal layers 59 c was 20%,and an on-current and an off-current thereof were measured. The resultsthereof are shown in FIG. 11. In FIG. 11, similarly to the tests withrespect to the third embodiment, results of comparative samples are alsoshown. In FIG. 11, denotes “∘” the on-off characteristic of the fifthembodiment, and “” denotes the on-off characteristic of the comparativesamples.

As shown in FIG. 11, also in the sample of the fifth embodiment,similarly to the sample of the third embodiment, increase in theoff-current was suppressed and a favorable on-off characteristic wasobtained as compared to the comparative samples. Furthermore, a morefavorable on-off characteristic than that of the sample of the thirdembodiment was obtained. This is because generation of dislocation wassuppressed by the SiGe mixed crystal layers 59 a.

Note that instead of the SiGe mixed crystal layers 59 c having the lowGe concentration, Si layers, which do not include Ge at all, may beused.

Sixth Embodiment

Next, a sixth embodiment of the present invention is described. FIG. 12Ais a cross-sectional view showing the structure of a semiconductordevice according to the sixth embodiment of the present invention.

In the sixth embodiment, a trench 68 is formed instead of the trench 8in each of the high-concentration impurity diffused layers 7. A sidesurface of the trench 68 on the channel region side is a <111> plane.Such a trench 68 can be formed in a self-aligned manner by wet etchingwith an organic alkaline solution such as TMAH (Tetra Methyl AmmoniumHydroxide) after forming the trench 8. Further, a side surface of a CVDoxide film 5 is moved back. Such moving back of a side surface can berealized by performing excessive HF processing after forming the trench68. Note that when the trench 68 is formed by the wet etching, aphysically damaged layer due to dry etching and ion implantationexisting on a side surface of the trench 8 can be removed, and alsoflatness thereof can be improved largely.

Then, a p-type SiGe mixed crystal layer 69 a is formed by an epitaxialgrowth method in the trench 68, and a p-type SiGe mixed crystal layer 69b is formed by an epitaxial growth method thereon. Further, on the SiGemixed crystal layer 69 b, a p-type SiGe mixed crystal layer 69 c isformed by an epitaxial growth method. When the SiGe mixed crystal layers69 a to 69 c is formed, for example, B having a very high electricalactivation rate is introduced as p-type impurity. Note that the heighta₆ of an uppermost surface of the SiGe mixed crystal layer 69 a from thebottom of the trench 8 is lower than the depth of the trench 8 with thesurface of the silicon substrate 1 being the standard. Further, theheight b₆ of an uppermost surface of the SiGe mixed crystal layer 69 bfrom the bottom of the trench 8 is higher than the depth of the trench 8with the surface of the silicon substrate 1 being the standard.Furthermore, a Ge concentration in the SiGe mixed crystal layer 69 aincreases with distance from the bottom of the trench 8, and is y₆ atthe uppermost surface. Further, the Ge concentration in the SiGe mixedcrystal layer 69 a is lower than 20 atom % as the whole for example, andthe Ge concentration y₆ is 20 atom % or higher for example. Further, aGe concentration z₆ in the SiGe mixed crystal layer 69 c is lower than20 atom % for example. Furthermore, in this embodiment, in a part wherethe side surface of the CVD oxide film 5 is moved back, the SiGe mixedcrystal layer 69 a is formed. The other structure is the same as thefirst embodiment. FIG. 12B is a graph showing the Ge concentrations inthe SiGe mixed crystal layers in the sixth embodiment.

According to the sixth embodiment as described above, the same effectsas in the fifth embodiment can be obtained. Further, between the sidewall insulating film 6 and the source-drain region, there exists theSiGe mixed crystal layer 69 a, in which p-type impurity (B for example)is introduced, and since the resistivity of this portion is low,parasitic resistance in an extension region is low. Further, since it islocated higher than the extension region, deterioration in roll-off doesnot occur, and thus the current driving performance can be increased

Furthermore, an effect to further facilitate control of the growingdirection of the SiGe mixed crystal layers is also obtained. Whengrowing of the SiGe mixed crystal layers is performed at the relativelylow temperature of approximately 400° C. to 550° C. with SiH₄ being thesource gas, desorption of hydrogen on the growing surface determines therate of the epitaxial growth. Further, on the <111> plane, desorption ofhydrogen is slower as compared to the (001) plane, and there is adifference of several more times in the growing speed between these twotypes of planes. Therefore, when the SiGe mixed crystal layer is formedby the pressure-reduced CVD method using mixed gas including SiH₄,growth from the side surface (<111> plane) plane becomes very small ascompared to growth from the bottom surface ((001) plane) of the trench68. Thus, as compared to the first to fifth embodiments, it becomespossible to control the epitaxial growth from the bottom up much easier.

Note that instead of the SiGe mixed crystal layers 69 c having the lowGe concentration, Si layers, which do not include Ge at all, may beused.

Seventh Embodiment

Next, a seventh embodiment of the present invention is explained. In thethird embodiment, the SiGe mixed crystal layers 39 b having the low Geconcentration are formed on the SiGe mixed crystal layers 39 a havingthe high Ge concentration, but the speed of epitaxial growth of the SiGemixed crystal layers decreases as the Ge concentration decreases. Theseventh embodiment is a method for obtaining the same structure as thethird embodiment in a shorter period of time. FIG. 13A is across-sectional view showing a method of manufacturing a semiconductordevice according to the seventh embodiment of the present invention.Further, FIG. 13B is a timing chart showing changes in growingtemperatures and Ge concentrations of SiGe mixed crystal layers in theseventh embodiment.

In the seventh embodiment, first, similarly to the first embodiment,processing until forming the trenches 8 is performed. Next, in each ofthe trenches 8, after a p-type SiGe mixed crystal layer 79 a is formedby an epitaxial growth method, an SiGe mixed crystal layer 79 b having athickness of approximately 1 nm to 2 nm for example is formed thereon byan epitaxial growth method as shown in FIG. 13A. Subsequently, a SiGemixed crystal layer 79 c having a thickness of approximately 20 nm to 30nm for example is formed on the SiGe mixed crystal layer 79 b.Thereafter, similarly to the first embodiment, formation of the silicidelayers 10 and 11, and so forth are performed.

Note that the height of an uppermost surface of the SiGe mixed crystallayer 79 a from the bottom of the trench 8 is, similarly to the SiGemixed crystal layer 39 a of the third embodiment, higher than the depthof the trench 8 with the surface of the silicon substrate 1 being thestandard. Further, a Ge concentration in the SiGe mixed crystal layer 79a is 20 atom % or higher for example, and Ge concentrations in the SiGemixed crystal layers 79 b and 79 c are lower than 20 atom % for example.Furthermore, a growing temperature for the SiGe mixed crystal layer 79 bis the same as or lower than a growing temperature for the SiGe mixedcrystal layer 79 a. Further, a growing temperature for the SiGe mixedcrystal layer 79 c is higher than the growing temperatures for both theSiGe mixed crystal layers 79 a and 79 b. For example, the growingtemperatures for the SiGe mixed crystal layers 79 a and 79 b areapproximately 400° C. to 550° C., and the growing temperature for theSiGe mixed crystal layer 79 c is 500° C. to 700° C.

According to the seventh embodiment as described above, since thegrowing temperature for the SiGe mixed crystal layer 79 c is higher thanthe growing temperatures for the SiGe mixed layers 79 a and 79 b,decrease in growing speed along with decrease in the Ge concentrationscan be compensated to thereby keep the productivity high. Note that whenthe SiGe mixed crystal layer 79 c having the low Ge concentration isformed directly on the SiGe mixed crystal layer 79 a at a hightemperature, crystal lattices of the SiGe mixed crystal layers 79 a and79 b become unstable, which may generate many defects. Such defects leadto increase in leak current and decrease in stress to the channel.However, in this embodiment, before forming the SiGe mixed crystal layer79 c, the SiGe mixed crystal layer 79 b, which is thin and has the lowGe concentration, is formed on the SiGe mixed crystal layer 79 a, sothat the SiGe mixed crystal layer 79 b operates as a buffer layer toprevent defects as described above from occurring.

Note that instead of the SiGe mixed crystal layers 79 b and 79 c havingthe low Ge concentration, two Si layers, which do not include Ge at all,may be used.

Eighth Embodiment

Next, an eighth embodiment of the present invention is explained. In thefourth embodiment, the SiGe mixed crystal layers 49 c having the low Geconcentration are formed on the SiGe mixed crystal layers 49 b havingthe high Ge concentration, but as described above, the speed ofepitaxial growth of the SiGe mixed crystal layers decreases as the Geconcentration decreases. The eighth embodiment is a method for obtainingthe same structure as the fourth embodiment in a shorter period of time.FIG. 14 is a cross-sectional view showing a method of manufacturing asemiconductor device according to the eighth embodiment of the presentinvention.

In the eighth embodiment, first, similarly to the first embodiment,processing until forming the trenches 8 is performed. Next, as shown inFIG. 14, a p-type SiGe mixed crystal layer 89 a is formed by anepitaxial growth method in each of the trenches 8, and a p-type SiGemixed crystal layer 89 b is formed thereon by an epitaxial growthmethod. Furthermore, on the SiGe mixed crystal layer 89 b, an SiGe mixedcrystal layer 89 c having a thickness of approximately 1 nm to 2 nm forexample is formed by an epitaxial growth method, and an SiGe mixedcrystal layer 89 d having a thickness of approximately 20 nm to 30 nmfor example is formed thereon by an epitaxial growth method. Thereafter,similarly to the first embodiment, formation of the silicide layers 10and 11 and so forth are performed.

Note that the height of an uppermost surface of the SiGe mixed crystallayer 89 a from the bottom of the trench 8 is, similarly to the SiGemixed crystal layer 49 a of the fourth embodiment, lower than the depthof the trench 8 with the surface of the silicon substrate 1 being thestandard. Further, the height of an uppermost surface of the SiGe mixedcrystal layer 89 b from the bottom of the trench 8 is, similarly to theSiGe mixed crystal layer 49 b of the fourth embodiment, higher than thedepth of the trench 8 with the surface of the silicon substrate 1 beingthe standard. Further, a Ge concentration in the SiGe mixed crystallayer 89a is lower than 20 atom % for example, a Ge concentration in theSiGe mixed crystal layer 89 b is 20 atom % or higher for example, and Geconcentrations in the SiGe mixed crystal layers 89 c and 89 d are lowerthan 20 atom % for example. Furthermore, a growing temperature for theSiGe mixed crystal layer 89 c is the same as or lower than a growingtemperature for the SiGe mixed crystal layer 89 b. Further, a growingtemperature for the SiGe mixed crystal layer 89 d is higher than thegrowing temperatures for both the SiGe mixed crystal layers 89 b and 89c. For example, the growing temperatures for the SiGe mixed crystallayers 89 b and 89 c are approximately 400° C. to 550° C., and thegrowing temperature for the SiGe mixed crystal layer 89 d is 500° C. to700° C.

According to the eighth embodiment as described above, the effect of thefourth embodiment and the effect of the seventh embodiment can beobtained simultaneously.

Note that instead of the SiGe mixed crystal layers 89 c and 89 d havingthe low Ge concentration, two Si layers, which do not include Ge at all,may be used.

Further, the method as in the seventh and eighth embodiments of formingSiGe mixed crystal layers having a low Ge concentration such that asecond layer is formed at a high temperature after a first layer isformed to be thin at a low temperature is also effective in the fifthand sixth embodiments.

Ninth Embodiment

Next, a ninth embodiment of the present invention is described. FIG. 15Ato FIG. 15G are cross-sectional views showing a method of manufacturinga semiconductor device according to the ninth embodiment of the presentinvention in the order of steps.

In this embodiment, first, as shown in FIG. 15A, on an n-type siliconsubstrate 1 whose surface is a (001) plane for example, a gateinsulating film 2 having a thickness of approximately 1.2 nm for exampleis formed. Next, on the gate insulating film 2, a gate electrode 3constituted of polycrystalline silicon in which a p-type impurity isintroduced is formed. Then, on the whole surface, an oxide film isformed by a CVD method, an insulating film is formed further, and theyare etched back to thereby form a CVD oxide film 5 and a side wallinsulating film 6. The CVD oxide film 5 each cover a part of the siliconsubstrate 1 and a side surface of the gate electrode 3.

Thereafter, as shown in FIG. 15B, trenches 8 matching with the side wallinsulating film 6 are formed.

Subsequently, by an epitaxial growth method, as shown in FIG. 15C, ap-type SiGe mixed crystal layer 99 a is formed in each of the trenches8. At this time, the height of an uppermost surface of the SiGe mixedcrystal layer 99 a from the bottom of the trench 8 is made lower thanthe depth of the trench 8 with the surface of the silicon substrate 1being the standard, similarly to the SiGe mixed crystal layer 19 a inthe first embodiment. Further, a Ge concentration in the SiGe mixedcrystal layer 99 a is lower than 20 atom % for example.

Next, by an epitaxial growth method, as shown in FIG. 15D, a p-type SiGemixed crystal layer 99 b is formed on the SiGe mixed crystal layer 99 a.At this time, the height of an uppermost surface of the SiGe mixedcrystal layer 99 b from the bottom of the trench 8 is made higher thanthe depth of the trench 8 with the surface of the silicon substrate 1being the standard, similarly to the SiGe mixed crystal layer 19 b ofthe first embodiment. Further, a Ge concentration in the SiGe mixedcrystal layer 99 b is higher than 20 atom % for example.

Next, by wet etching, as shown in FIG. 15E, the side wall insulatingfilm 6 and the CVD oxide film 5 are removed. In this processing, forexample a phosphoric acid solution, a hydrogen fluoride solution, or thelike is used.

Next, as shown in FIG. 15F, with the gate electrode 3 being a mask, ap-type impurity is ion-implanted to thereby form impurity diffusedlayers 4 in the surface of the silicon substrate 1 on both sides of thegate electrode 3 respectively. Subsequently, on the whole surface, anoxide film is formed by a CVD method and etched back to thereby form aside wall insulating film 96. Next, with the gate electrode 3 and theside wall insulating film 96 being a mask, a p-type impurity ision-implanted to thereby form high-concentration impurity diffusedlayers 7 which overlap parts of the impurity diffused layers 4respectively.

Next, as shown in FIG. 15G, a Ni layer or the like is formed on theentire surface and thermal treatment is performed to thereby formsilicide layers 10 on the SiGe mixed crystal layers 99 b respectively,and also form a silicide layer 11 on the gate electrode 3. Thereafter,an interlayer insulating film, a wiring and so forth are formed tocomplete the semiconductor device.

In the ninth embodiment as described above, since the impurity diffusedlayers 4 and 7 are formed after the SiGe mixed crystal layers 99 a and99 b are formed, unnecessary diffusion of impurity does not occur whenthe SiGe mixed crystal layers 99 a and 99 b are formed. Therefore, evenwhen the growing temperature for the SiGe mixed crystal layers 99 a and99 b is set higher than that in the first embodiment, decrease inperformance accompanying the diffusion of impurity does not occur. Suchdecrease in performance becomes significant as the gate length becomesshort. For example, while the growing temperature for the SiGe mixedcrystal layers 19 a and 19 b is approximately 400° C. to 550° C. in thefirst embodiment, the growing temperature for the SiGe mixed crystallayers 99 a and 99 b can be approximately 500° C. to 800° C. in theninth embodiment.

Tenth Embodiment

Next, a tenth embodiment of the present invention is explained. Thetenth embodiment is a method of applying the sequence of the ninthembodiment to the seventh embodiment. FIG. 16 is a cross-sectional viewshowing a method of manufacturing a semiconductor device according tothe tenth embodiment of the present invention.

In the tenth embodiment, first, similarly to the ninth embodiment,processing until forming the trenches 8 is performed. Next, a p-typeSiGe mixed crystal layer 109 a is formed by an epitaxial growth methodin each of the trenches 8, and a SiGe mixed crystal layer 109 b having athickness of approximately 1 nm to 2 nm for example is formed thereon byan epitaxial growth method as shown in FIG. 16. Subsequently, a SiGemixed crystal layer 109 c having a thickness of approximately 20 nm to30 nm for example is formed on the SiGe mixed crystal layer 109 b.Thereafter, similarly to the ninth embodiment, formation oflow-concentration impurity diffused layers 4, a side wall insulatingfilm 96 and high-concentration impurity diffused layers 5, and so forthare performed.

Note that the height of an uppermost surface of the SiGe mixed crystallayer 109 a from the bottom of the trench 8 is, similarly to the SiGemixed crystal layer 79 a of the seventh embodiment, higher than thedepth of the trench 8 with the surface of the silicon substrate 1 beingthe standard. Further, a Ge concentration in the SiGe mixed crystallayer 109 a is 20 atom % or higher for example, and Ge concentrations inthe SiGe mixed crystal layers 109 b and 109 c are lower than 20 atom %for example. Furthermore, a growing temperature for the SiGe mixedcrystal layer 109 b is the same as or lower than a growing temperaturefor the SiGe mixed crystal layer 109 a. Further, a growing temperaturefor the SiGe mixed crystal layer 109 c is higher than the growingtemperatures for both the SiGe mixed crystal layers 109 a and 109 b. Forexample, the growing temperatures for the SiGe mixed crystal layers 109a and 109 b are approximately 500° C. to 800° C., and the growingtemperature for the SiGe mixed crystal layer 109 c is 600° C. to 850° C.

According to the tenth embodiment as described above, the effect of theseventh embodiment and the effect of the ninth embodiment can beobtained simultaneously.

Note that instead of the SiGe mixed crystal layers 109 b and 109 chaving the low Ge concentration, two Si layers, which do not include Geat all, may be used.

Eleventh Embodiment

Next, an eleventh embodiment of the present invention is explained. Theeleventh embodiment is a method of applying the sequence of the ninthembodiment to the eighth embodiment. FIG. 17 is a cross-sectional viewshowing a method of manufacturing a semiconductor device according tothe eleventh embodiment of the present invention.

In the eleventh embodiment, first, similarly to the ninth embodiment,processing until forming the trenches 8 is performed. Next, as shown inFIG. 17, a p-type SiGe mixed crystal layer 119 a is formed by anepitaxial growth method in each of the trenches 8, and a p-type SiGemixed crystal layer 119 b is formed thereon by an epitaxial growthmethod. Furthermore, on the SiGe mixed crystal layer 119 b, an SiGemixed crystal layer 119 c having a thickness of approximately 1 nm to 2nm for example is formed by an epitaxial growth method, and an SiGemixed crystal layer 119 d having a thickness of approximately 20 nm to30 nm for example is formed thereon by an epitaxial growth method.Thereafter, similarly to the ninth embodiment, formation oflow-concentration impurity diffused layers 4, a side wall insulatingfilm 96 and high-concentration impurity diffused layers 5, and so forthare performed.

Note that the height of an uppermost surface of the SiGe mixed crystallayer 119 a from the bottom of the trench 8 is, similarly to the SiGemixed crystal layer 89 a of the eighth embodiment, lower than the depthof the trench 8 with the surface of the silicon substrate 1 being thestandard. Further, the height of an uppermost surface of the SiGe mixedcrystal layer 119 b from the bottom of the trench 8 is, similarly to theSiGe mixed crystal layer 89 b of the eighth embodiment, higher than thedepth of the trench 8 with the surface of the silicon substrate 1 beingthe standard. Further, a Ge concentration in the SiGe mixed crystallayer 119 a is lower than 20 atom % for example, a Ge concentration inthe SiGe mixed crystal layer 119 b is 20 atom % or higher for example,and Ge concentrations in the SiGe mixed crystal layers 119 c and 119 dare lower than 20 atom % for example. Furthermore, a growing temperaturefor the SiGe mixed crystal layer 119 c is the same as or lower than agrowing temperature for the SiGe mixed crystal layer 119 b. Further, agrowing temperature for the SiGe mixed crystal layer 119 d is higherthan the growing temperatures for both the SiGe mixed crystal layers 119b and 119 c. For example, the growing temperatures for the SiGe mixedcrystal layers 119 b and 119 c are approximately 500° C. to 800° C., andthe growing temperature for the SiGe mixed crystal layer 119 d is 600°C. to 850° C.

According to the eleventh embodiment as described above, the effect ofthe eighth embodiment and the effect of the ninth embodiment can beobtained simultaneously.

Note that instead of the SiGe mixed crystal layers 119 c and 119 dhaving the low Ge concentration, two Si layers, which do not include Geat all, may be used.

Further, the methods in the ninth to eleventh embodiment of formingimpurity diffused layers after semiconductor layers are formed are alsoeffective for the second to sixth embodiments.

Note that the Ge concentration in the SiGe mixed crystal layer ispreferably 40 atom % or lower in high-strain layers (the SiGe mixedcrystal layers 19 b, 39 a, and the like). This is because when the Geconcentration exceeds 40 atom %, the critical film thickness becomesapproximately 20 nm or smaller at a growing temperature of approximately400° C. to 550° C., which allows occurrence of dislocation easily.

Further, the embodiments up to this point are explained only for ap-channel MOS transistor, but it is preferable that also an n-channelMOS transistor is formed in an element active region separated andinsulated from a p-channel MOS transistor by an element isolation regionwhile the p-channel MOS transistor is formed.

Further, as the n-channel MOS transistor, it is also possible to form astrained silicon transistor. In this case, a Si layer in which carbon(c) is introduced may be formed in a trench for example. Since thelattice constant of C is lower than that of Si, stress and strain inreverse direction to those in the case of forming the SiGe layers aregenerated. Further, in the n-channel MOS transistor, its carriers areelectrons. Therefore, similarly to the p-channel MOS transistor, thedegree of movement of carriers improves. Then, by adopting the samestructure and/or method of manufacturing as in the first to sixthembodiments in such an n-channel MOS transistor with respect to thep-channel transistor, much more favorable characteristics as compared toconventional arts can be obtained.

Note that when the n-channel MOS transistor is formed, it is preferablethat the concentration of C is lower than 1 atom % in a low-strain layer(layer corresponding to the SiGe mixed crystal layers 19 a, 39 b, andthe like). Further, in the high-strain layers (layers corresponding tothe SiGe mixed crystal layers 19 b, 39 a, and the like), it ispreferable that the concentration of C is 1 atom % or higher. Further,when the concentration of C exceeds 2 atom %, it becomes easy for Catoms to enter positions between the lattice of Si crystals, which caneasily induce crystal defects. Accordingly, the concentration of C inthe high-strain layer is preferably 2 atom % or lower. Furthermore, asthe n-type impurity, for example phosphorous (P) or arsenic (As) can beused, the doping amount thereof being approximately 1×10¹⁹ to 1×10²⁰cm⁻³ for example.

It should be noted that in FIG. 1 and FIG. 2 and relevant parts theretoin Japanese Patent Publication No. 2005-101278, there is disclosedformation of an Si film of 1 nm to 10 nm on an SiGe layer at the sametime as formation of a film for a channel of another transistor when atransistor of an elevated source-drain structure is formed. However,this Si film is formed by coincidence merely because the aforementionedanother transistor exists. Further, by just being a transistor of anelevated source-drain structure, it is not possible to generate a strainin a channel, and therefore the present invention is different therefromin preconditions.

According to the present invention, a region of a semiconductor layerhaving a large difference in lattice constant from silicon is locatedwithin the same plane as an interface between the silicon substrate andthe gate insulating film, so that the high degree of movement ofcarriers can be assured. Further, when there exists a region having asmall difference in lattice constant below this region, crystal defectssuch as dislocation therein can be suppressed. Further, when thereexists a region having a small difference in lattice constant betweenthis region and the silicide layer, it is possible to suppress formationof a NiSi₂ phase. Therefore, favorable characteristics can be obtained.

The present embodiments are to be considered in all respects asillustrative and no restrictive, and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced therein. The invention may be embodied in other specificforms without departing from the spirit or essential characteristicsthereof.

1. A method of manufacturing a semiconductor device, comprising: forminga gate insulating film on a silicon substrate; forming a gate electrodeon the gate insulating film; performing ion-implantation into thesilicon substrate using the gate electrode as a mask; forming a sidewall insulating film on sidewall of the gate electrode; forming a trenchin the silicon substrate using the gate electrode and the side wallinsulating film as masks; forming a first crystal layer in the trench;forming a second crystal layer on the first crystal layer; and forming asilicide layer on the second crystal layer; wherein a top surface of thefirst crystal layer is located at the same height or higher than aninterface between the silicon substrate and the gate insulating film,and the second crystal layer has a lattice constant closer to a latticeconstant of silicon than a lattice constant of the first crystal layer.2. A method of manufacturing a semiconductor device, comprising: forminga gate insulating film on a silicon substrate; forming a gate electrodeon the gate insulating film; performing ion-implantation into thesilicon substrate using the gate electrode as a mask; forming a sidewall insulating film on sidewall of the gate electrode; forming a trenchin the silicon substrate using the gate electrode and the side wallinsulating film as masks; forming a first crystal layer in the trench;and forming a second crystal layer on the first crystal layer; forming asilicide layer on the second crystal layer; wherein a top surface of thefirst crystal layer is located at the same height or lower than aninterface between the silicon substrate and the gate insulating film;the first crystal layer is constituted of silicon germanium having afirst germanium concentration; and the second crystal layer isconstituted of silicon germanium having a second germanium concentrationwhich is lower than the first germanium concentration.
 3. The method ofmanufacturing a semiconductor device according to claim 2, wherein thefirst germanium concentration is 20 atom % or higher, and the secondgermanium concentration is lower than 20 atom %.
 4. The method ofmanufacturing a semiconductor device according to claim 2, wherein thefirst crystal layer is formed at a first growing temperature, and thesecond crystal layer is formed at a second growing temperature which ishigher than the first growing temperature.
 5. A method of manufacturinga semiconductor device, comprising: forming a gate insulating film on asilicon substrate; forming a gate electrode on the gate insulating film;performing ion-implantation into the silicon substrate using the gateelectrode as a mask; forming a side wall insulating film on sidewall ofthe gate electrode; forming a trench in the silicon substrate using thegate electrode and the side wall insulating film as masks; forming afirst crystal layer in the trench; forming a second crystal layer on thefirst crystal layer; and forming a silicide layer on the second crystallayer; wherein a top surface of the first crystal layer is located atthe same height or lower than an interface between the silicon substrateand the gate insulating film; and the first crystal layer has a latticeconstant closer to a lattice constant of silicon than a lattice constantof the second crystal layer.
 6. A method of manufacturing asemiconductor device, comprising: forming a gate insulating film on asilicon substrate; forming a gate electrode on the gate insulating film;performing ion-implantation into the silicon substrate using the gateelectrode as a mask; forming a trench in the silicon substrate; forminga first crystal layer in the trench; forming a second crystal layer onthe first crystal layer; and forming a silicide layer on the secondcrystal layer; wherein a top surface of the first crystal layer islocated at the same height or lower than an interface between thesilicon substrate and the gate insulating film; the first crystal layeris constituted of silicon germanium having a first germaniumconcentration; and the second crystal layer is constituted of silicongermanium having a second germanium concentration which is higher thanthe first germanium concentration.
 7. The method of manufacturing asemiconductor device according to claim 6, wherein: the first germaniumconcentration is lower than 20 atom %, and the second germaniumconcentration is 20 atom % or higher.
 8. A method of manufacturing asemiconductor device according to claim 6, wherein: the first crystallayer is formed at a first growing temperature, and the second crystallayer is formed at a second growing temperature which is lower than thefirst growing temperature.